logo
About Us

Wuhan Precise Instrument Co., Ltd.

With Source Measure Unit as the Core,Focusing on Power Semiconductor Testing!
view more
request a quote
company.img.alt
company.img.alt
company.img.alt
Why
Choose Us
picurl
Human Capital Advantage
The company has over 360 employees, with the total number of R&D personnel accounting for 70%. It gathers many renowned professors, experts and PhDs in the industry.
picurl
Technical Advantage
Positive development of technology and algorithms, continuous innovation and leadership in testing and measurement technology
picurl
Patent Application
88+ applied for patents,48+ authorized patents,90+ software copyrights
picurl
Industry Certification
Obtain ISO:14001, ISO:9001, ISO:45001 certifications as well as classification society certifications.
More Products
SOLUTION
SOLUTION
  • Photodiode test
    02-18 2025
    Overview       Diode is a semiconductor device that converts light into current . There is an intrinsic layer between the p (positive) and n (negative) layers. The photodiode accepts the light energy as input to generate electric current. Photodiodes are also known as photodetectors, photosensors or photodetectors, common are photodiodes (PIN), avalanche photodiode (APD), single photon avalanche diode (SPAD) , silicon photomultiplier (SiPM / MPPC).       Photodiode (PIN) also known as PIN junction diode, where a layer of I-type semiconductor is low in the middle of the photodiode PN junction , can increase the width of the depletion area,reduce the impact of diffusion movement and improve the response speed. Due to the low doping concentration of this incorporation layer, almost intrinsic semiconductor, it's called I-layer, so this structure becomes PIN photodiode;       Avalanche photodiode(APD) is a photodiode with an internal gain, the principle similar to a photomultiplier tube. After add a high reverse bias voltage (generally 100-200V in silicon materials), internal current gain of approximately 100 can be obtained in the APD by using the ionization collision (avalanche breakdown) effect;       Single photon avalanche diode(SPAD) is a photoelectric detection avalanche diode with single photon detection capability operating in APD (Avalanche Photon Diode) in Geiger mode. Applied to Raman spectroscopy, positron emission tomography, and fluorescence lifetime imaging areas ;       Silicon photomultiplier (SiPM) is a kind of working on the avalanche breakdown voltage and has the avalanche quenching mechanism of avalanche photodiode array in parallel, with excellent photon number resolution and single photon detection sensitivity of silicon low light detector, with high gain, high sensitivity , low bias voltage, not sensitive to magnetic field, compact structure.       PIN photodiodes have no multiplier effect and are often applied in the short-range detection field. APD avalanche photodiode technology is relatively mature and is the most widely used photodetector. Thetypical gain of APD is currently 10-100 times, light source needs to significantly increase to ensure that the APD has a signal during long-distance test, SPAD single photon avalanche diode and SiPM / MPPC silicon photomultiplier exist mainly to solve the gain capability and the implementation of large-size arrays: 1) SPAD or SiPM / MPPC is an APD working in Geiger mode, which can obtain a gain of tens to thousands of times, but the system and circuit costs are high; 2) SiPM / MPPC is an array form of multiple SPAD, which can obtain higher detectable range and use with array light source through multiple SPAD, so it's easier to integrate CMOS technology and has the cost advantage of mass production scale. In addition, as SiPM operating voltage is mostly lower than 30V, no need high voltage system, easy to integrate with mainstream electronic systems, the internal million- level gain also makes SiPM requirements for the back- end readout circuit simpler. At present, SiPM is widely used in medical instruments, laser detection and measurement (LiDAR), precision analysis, radiation monitoring, safety detection and other fields, with the continuous development of SiPM, it will expand to more fields.   Photodetector Photoelectric Test       Photodetectors generally need to test the wafer first,then perform a second test on the device after packaging to complete the final characteristic analysis and sorting operation; when the photodetector is working, it needs to apply a reverse bias voltage to pull the light out. The generated electron- hole pairs are injected to complete the photogenerated carrier.So photodetectors usually work in the reverse state; during testing, more attention is paid to parameters such as dark current, reverse breakdown voltage, junction capacitance, responsivity, and crosstalk. Use The Digital Sourcemeasure Meter Photoelectric performance characterization of photodetectors       One of the best tools for the characterization of photoelectric performance parameters is the digital source measure meter (SMU). Digital source measure meter as independent voltage source or current source, can output constant voltage, constant current, or pulse signal, can also be as a instrument for voltage or currentmeasurement; support Trig trigger, multiple instruments linkage work; for photoelectric detector single sample test and multiple sample verification test, a complete test scheme can be directly built through a single digital source measure meter, multiple digital source measure meter or card source measure meter.   PRECISE Digital Source measure Meter Build the photoelectric test scheme of the photoelectric detector Dark current Dark current is the current formed by PIN / APD tube without illumination; it's essentially generated by the structural properties of PIN / APD itself, which is usually below μA grade. Using the S series or P series source measure meter, the minimum current of S series source measure meter is 100 pA, and the minimum current of P series source measure meter is 10 pA.   Testing circuits   IV curve of dark current       When measuring the low level current(< 1 μA), the triple coaxial connectors and triple coaxial cables can be used. The three coaxial cable is composed of the inner core (the corresponding connector is the central contact), the protective layer (the corresponding connector is the middle cylindrical contact), and the outer skin shielding layer. In the test circuit of the protection end of the source measure meter, as there is equipotential between the three coaxial protection layer and the inner core , there will be no leakage current generation , which can improve the accuracy of lowcurrent test.   Interfaces of source measure meter   Triaxial Adapter   Breakdown reverse voltage       When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase, this phenomenon is called electric breakdown. The critical voltage that  causes electrical breakdown is called the diode reverse breakdown voltage.       According to the different specifications of the device, the voltage resistance index is not consistent, and the instrument required for the test is also different. It is recommended to use S series desktop source measure meter or P series pulse source measure meter below 300V, the maximum voltage is 300V, the breakdown voltage above 300V is recommended, and the maximum voltage is 3500V. Connection circuits Reverse breakdown voltage IV curve   C-V Test       The junction capacitance is an important property of the photodiode and has a great influence on its bandwidth and response. It should be noted that the diode with a large PN junction area has a larger junction volume and also has a larger charging capacitor. In reverse bias application, increasing the depletion zone width of the junction effectively reduces the junction capacitance and increases the response speed. The photodiode C-V test scheme consists of S series source measure meter, LCR, test clamp box and upper computer software. The test circuit and curve diagram are shown as below. CV testing connection circuits CV curve Responsivity       The responsivity of the photodiode is defined as the ratio of the generated photocurrent (IP) to the incident light power (Pin), at the specified wavelength and reverse bias, usually in A / W. The responsivity is related to the magnitude of the quantum efficiency, which is the external embodiment of the quantum efficiency, and the responsivity is R=IP / Pin. Using the S series or P series source measure meter, the minimum current of S series source measure meter is 100 pA, and the minimum current of P series sourcemeasure meter is 10 pA.   Optical Crosstalk Test (Crosstalk)       In the lidar field the number of photodetectors used in lidar products with different lines is different, and the interval between photodetectors is very small. In the process of use, there will be mutual optical crosstalk at the same time, and the existence of optical crosstalk will seriously affect the performance of lidar.       Optical crosstalk takes two forms: the light incident at a large angle above the array enters the adjacent photodetector and is absorbed before being fully absorbed by the photodetector; second, a part of the large-angle incident light is not incident to the photosensitive area, but is incident to the interconnecting layer between the photodetectors and is reflected into the photosensitive area of the adjacent device. Array detector optical crosstalk test is mainly for array DC crosstalk test, which refers to the maximum value of the ratio of the photocurrent of the light unit to any adjacent unit photocurrent in the array diode under the specified reverse bias, wavelength and optical power.   S/P Series Test Solution CS Series Multi-channel Test Solution        The test by the trial S series, P series, or CS series multi-channel testing scheme is recommended.       This scheme is mainly composed of CS1003C / CS1010C host and CS100 / CS400 subcard, which has the characteristics of high channel density, strong synchronous trigger function and high multi-device combination efficiency.       CS1003C / CS1010C: Using custom frame, backplane bus bandwidth up to 3 Gbps, support 16 trigger bus, to meet the needs of high speed communication of multi-card equipment, CS1003C has a slot for up to 3 subcards, CS1010C has a slot for up to 10 subcards.       CS100 subcard: single card single channel subcard with four quadrant working capacity, maximum voltage of 300V, minimum current of 100 pA, output accuracy of 0.1%, maximum power of 30W; up to 10 test channels.       CS400 subcard: a single card four-channel word card with 4 channels, the maximum voltage of 10V, the maximum current of 200 mA , output accuracy of 0.1%, single channel maximum power of 2W; can build 40 with CS1010 host test channels.   Optical Coupling (OC) Electrical Performance Test Solution       Optical coupler (optical coupler, English abbreviation OC) is also known as photoelectric separator or photoelectric coupler, referred to as photocoupler. It is a device that transmits electrical signals with light as the medium. It is generally composed of three parts: light transmission, light reception and signal amplification. Theinput electrical signal drives a light- emitting diode (LED), causing it to emit a certain wavelength of light, which is received by the optical detector to generate a photocurrent, which is further amplified and output. This completes the conversion of electricity one light one electricity, thus playing the role of input, output and isolation.       Because the input and output of optical coupler are isolated from each other, the transmission of electrical signals is unidirectional, so it has good electrical insulation ability and anti-interference ability, so it is widely used in various circuits. At present, it has become one of the most diverse and widely used photoelectric devices.       For optical coupling devices, the main electrical performance characterization parameters are: forward voltage VF, reverse current IR, input capacitance CIN, emitter- collector breakdown voltage BVcEo, current conversion ratio CTR, etc. Direct Voltage VF VF refers to the pressure drop of the LED itself at a given operating current. Common low-power LEDs usually test the forward operating voltage with the mA current. The Perth S series or P series source measure meter is recommended during testing.   Vf testing circuits Reverse Leakage Current IR       Usually the reverse current flowing through the photodiode at the maximum reverse voltage, usually the reverse leakage currentis at the nA level. The test S series or P series sourcemeasure meter has the ability to work infour quadrants, it can output negative voltage without adjusting the circuit. When measuring low level current (
  • Test of Electrical Performance of Triodes and Bipolar Transistors
    03-31 2023
          Bipolar junction transistor-BJT is one of the basic components of semiconductors.It has the function of current amplification and is the core component of electronic circuits.The BJT is made on a semiconductor substrate with two PN junctions that are very close to each other.The two PN junctions divide the whole semiconductor into three parts.The middle part is the base region,and the two sides are the emitter region and the collector region.       BJT characteristics that are often concerned in designing circuits include current amplification factor β,inter-electrode reverse current ICBO,ICEO,collector maximum allowable current ICM,reverse breakdown voltage VEBO,VCBO,VCEO,and input and output characteristics of bjt. Input/Output Characteristics of bjt          BJT input and output characteristics curve reflects the relationship between the voltage and current of each electrode of the bjt.It is used to describe the operating characteristic curve of the bjt.The commonly used bjt characteristic curves include the input characteristic curve and the output characteristic curve:  Intput characteristics of bjt       The input characteristics of bjt curve indicates that when the voltage Vce between the E pole and the C pole remains unchanged,the relationship between the input current (ie, the base current IB) and the input voltage (ie, the voltage between the base and the emitter VBE) ; When VCE = 0,it is equivalent to a short circuit between the collector and the emitter, that is,the emitter junction and the collector junction are connected in parallel. Therefore, the input characteristics of bjt curve is similar to the volt-ampere characteristics of the PN junction,and has an exponential relationship.When Vce increases,the curve will shift to the right.For low-power transistors,an input characteristic curve with VcE greater than 1V can approximate all input characteristics of bjt curves with VcE greater than 1V. Output characteristics of bjt       The output characteristics of bjt curve shows the relationship curve between the transistor output voltage VCE and the output current IC when the base current IB is constant.According to the output characteristics of bjt curve,the working state of the bjt is divided into three areas.Cut-off area: It includes a set of working curves with IB=0 and IBVCE collector current IC increases rapidly with the increase of VCE. At this time,the two PN junctions of the triode are both forward biased,the collector junction loses the ability to collect electrons in a certain area,and the IC is no longer controlled by IB.VCE has a great effect on IC control, and the tube is equivalent to the on state of a switch. Enlarged region: In this region the emitter junction of the transistor is forward biased and the collector is reverse biased.When VEC exceeds a certain voltage, the curve is basically flat.This is because when the collector junction voltage increases,most of the current flowing into the base is pulled away by the collector,so when VCE continues to increase,The current IC changes very little. In addition,when IB changes,IC changes proportionally.That is to say, IC is controlled by IB,and the change of IC is much larger than the change of IB.△IC is proportional to △IB.There is a linear relationship between them,so this area is also called the linear area.In the amplification circuit, the triode must be used to work in the amplification area. Analyzing bjt characteristics quickly with source measure meters       According to different materials and uses,bjt characteristics like voltage and current technical parameters of bjt devices are also different.For bjt devices below 1A,it is recommended to build a test plan with two S series source measure meters.The maximum voltage is 300V,the maximum current is 1A,and the minimum current is 100pA,which can meet small Power MOSFET test needs.       For MOSFET power devices with a maximum current of 1A~10A, it is recommended to use two P series pulse source measure meters to build a test solution, with a maximum voltage of 300V and a maximum current of 10A.       For MOSFET power devices with a maximum current of 10A~100A, it is recommended to use a P series pulse source measure meter + HCP to build a test solution. The maximum current is as high as 100A and the minimum current is as low as 100pA. bjt characteristics-Reverse current between poles       ICBO refers to the reverse leakage current flowing through the collector junction when the emitter of the triode is open circuit; IEBO refers to the current from the emitter to the base when the collector is open circuit. It is recommended to use a Precise S series or P series source measure meter for testing. bjt characteristics-reverse breakdown voltage          VEBO refers to the reverse breakdown voltage between the emitter and the base when the collector is open; VCBO refers to the reverse breakdown voltage between the collector and the base when the emitter is open,which depends on the avalanche breakdown of the collector junction. Breakdown voltage;VCEO refers to the reverse breakdown voltage between the collector and the emitter when the base is open, and it depends on the avalanche breakdown voltage of the collector junction. When testing,it is necessary to select the corresponding instrument according to the technical parameters of the breakdown voltage of the device.It is recommended to use the S series desktop source measure unit  or the P series pulse source measure meter when the breakdown voltage is below 300V.The maximum voltage is 300V,and the device with a breakdown voltage above 300V is recommended. Using the E series,the maximum voltage is 3500V. bjt characteristics-CV characteristics      Like MOS tubes, bjt also characterize CV characteristics through CV measurements.
  • Diode I-V and C-V Tests
    03-31 2023
          A diode is a unidirectional conductive component made of semiconductor materials.The product structure is generally a single PN junction structure, which only allows current to flow in one direction.Diodes are widely used in rectification,voltage stabilization,protection and other circuits,and are one of the most widely used electronic components in electronic engineering.       Diode Characteristics Test is to apply voltage or current to Diode,and then test its response to excitation.Usually,Diode Characteristics Test requires several instruments to complete,such as digital multimeter,voltage source,current source, etc.However,a system composed of several instruments needs to be programmed,synchronized, connected,measured and analyzed separately.The process is complex, time-consuming,and takes up too much test bench space;Complicated mutual trigger operations have disadvantages such as greater uncertainty and slower bus transmission speed.       Therefore,in order to quickly and accurately obtain Diode test data such as current-voltage (I-V), capacitance-voltage (C-V) characteristic curves, etc.One of the best tools for implementing Diode Characteristics Test is a source measure unit (SMU).The Source measure Meter can be used as a stand-alone constant voltage or constant current source,voltmeter,ammeter,and ohmmeter,and can also be used as a precision electronic load.Its high-performance architecture also allows it to be used as a pulse generator,waveform generator,and automatic Current-voltage (I-V) characteristic analysis system supports four-quadrant operation. PRECISE source measure meter easily realizes the analysis of diode iv characteristics          The diode iv characteristic is one of the main parameters to characterize the performance of the PN junction of a semiconductor diode. The diode iv characteristics mainly refers to the forward characteristic and the reverse characteristic. Forward diode iv characteristics       When a forward voltage is applied to both ends of the diode,in the initial part of the forward characteristic,the forward voltage is very small and the forward current is almost zero.This section is called the dead zone. The forward voltage that cannot make the diode conduction is called the dead zone voltage.When the forward voltage is greater than the dead-zone voltage,the diode is forward-conducting, and the current rises rapidly as the voltage increases.In the current range of normal use,the terminal voltage of the diode remains almost unchanged when it is turned on,and this voltage is called the forward voltage of the diode. Reverse diode iv characteristics      When the reverse voltage is applied,if the voltage does not exceed a certain range,the reverse current is very small,and the diode is in a cut-off state.This current is called reverse saturation current or leakage current.When the applied reverse voltage exceeds a certain value,the reverse current will suddenly increase,and this phenomenon is called electrical breakdown.The critical voltage that causes electrical breakdown is called the diode reverse breakdown voltage.       The diode characteristics that characterize the performance and application range of diodes mainly include parameters such as forward voltage drop (VF), reverse leakage current (IR) and reverse breakdown voltage (VR). Diode characteristics-Forward voltage drop (VF)          Under the specified forward current,the forward voltage drop of the diode is the lowest forward voltage that the diode can conduct.The forward voltage drop of low-current silicon diodes is about 0.6-0.8 V at medium current levels;the forward voltage drop of germanium diodes is about 0.2-0.3 V;the forward voltage drop of high-power silicon diodes often reaches 1V.When testing,it is necessary to select different test instruments according to the size of the working current of the diode: when the working current is less than 1A,use the S series source measure meter for measurement;when the current is between 1 and 10A, it is recommended to use the P series pulse source measure unit;HCP series high current desktop pulse source is recommended for 10~100A;HCPL100 high current pulse power supply is recommended for above 100A. Diode characteristics-Reverse breakdown voltage (VR)        Depending on the material and structure of the diode,the breakdown voltage is also different.If it is lower than 300V,it is recommended to use the S series desktop source measure unit,and if it is higher than 300V it is recommended to use the E series high-voltage source measurement unit.       During high current testing,the resistance of the test lead cannot be ignored, and the four-wire measurement mode is required to eliminate the influence of the lead resistance.All PRECISE source measure meters support the four-wire measurement mode.          When measuring low-level currents (
LATEST BLOGS
Discover The Latest Blogs
Contact Us
Inquiry
If you have any questions, please contact us immediately and we will respond as soon as possible
You can also follow us on social media
18162556018